Berlin 2008 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 31: Poster II

HL 31.23: Poster

Tuesday, February 26, 2008, 16:30–19:00, Poster D

Modelling of nanowiretransistors in Landauer-Büttiker formalism — •Paul Nicolae Racec^1,2 and Elena Roxana Racec^3,4 — ¹Weierstrass Institute for Applied Analysis and Stochastics, Mohrenstr. 39, 10117 Berlin, Germany — ²National Institute of Materials Physics, PO Box MG-7, 077125 Bucharest Magurele, Romania — ³Brandenburg Technical University Cottbus, Faculty 1, Postfach 101344, 03013 Cottbus, Germany — ⁴University of Bucharest, Faculty of Physics, PO Box MG-11, 077125 Bucharest Magurele, Romania

We present a quantum mechanical modeling of I-V characteristics of a nanowiretransistor without gate leackage current. The model is suitable also for nanowire heterostructures, including a resonant structure along the nanowire. For the description of the quantum transport we use the Landauer-Büttiker formalism. The cylindrical symmetry of the nanowire has reguired a formulation of the scattering theory in cylindrical coordinates. The two dimensional (2D) many-channels scattering problem is solved efficiently within the R-matrix formalism. The interaction between electrons is considered in the Hartree approximation. We use analytical solutions for the three-dimensional electrostatic problem and also for the two-dimensional quantization on the transversal directions.