Berlin 2008 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 31: Poster II
HL 31.26: Poster
Dienstag, 26. Februar 2008, 16:30–19:00, Poster D
Electrical integration of semiconductor nanowires — •Katharina Wegener1, Sven Müller1, Daniel Stichtenoth1, Wilma Dewald1, Carsten Ronning1, Christoph Gutsche2, Andrey Lysov2, Kai Blekker2, Werner Prost2, and Franz Josef Tegude2 — 1II. Institute of Physics, University of Göttingen, Germany — 2Solid-State Electronics Department, University of Duisburg-Essen, Germany
Nanowires have a very high surface-to-volume ratio and are therefore very promising candidates for sensing applications. Configured as a field-effect transistor (FET) with their surfaces acting as gates, nanowires exhibit a strong conductivity change in response to surface variations. The binding of a certain molecule can therefore be detected with very high sensitivity.
When building a sensor, the electrical integration of the nanowires is an important step. Two contacting methods will be compared: (1) platinum patterns have directly been written using a focused ion beam system and (2) leads have been deposited via e-beam lithography with subsequent metal deposition and lift-off technology. First results of the electrical measurements will be shown. Furthermore, we have implemented zinc oxide nanowires into FET devices. The carrier type and mobility could be extracted by fitting a long channel metal-insulator-semiconductor FET model to the experimental results.