Berlin 2008 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 31: Poster II
HL 31.39: Poster
Tuesday, February 26, 2008, 16:30–19:00, Poster D
Influence of spin-orbit coupling and crystal-field splitting on the electronic and optical properties of nitride quantum dots with a wurtzite structure — •Stefan Schulz1, Stefan Schumacher2, and Gerd Czycholl1 — 1Institute for Theoretical Physics, University of Bremen — 2College of Optical Sciences, University of Arizona, Tucson, USA
In recent years, semiconductor quantum dots (QDs) have been the subject of intense experimental and theoretical research. As a new material system, group-III nitride based devices are of particular interest due to their wide range of emission frequencies from infrared to ultraviolet and their potential for high-power electronic applications.
We present an sp3 tight-binding model for the calculation of the electronic and optical properties of InN/GaN quantum dots (QDs). The tight-binding model takes into account piezoelectricity, spin-orbit coupling and crystal-field splitting. Excitonic absorption spectra are calculated using the configuration interaction scheme. We study the electronic and optical properties of InN/GaN QDs and their dependence on structural properties, crystal-field splitting, and spin-orbit coupling.