Berlin 2008 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 31: Poster II
HL 31.45: Poster
Dienstag, 26. Februar 2008, 16:30–19:00, Poster D
Optical Investigations of the Temperature Behavior of InP Quantum Dots Embedded in Different Shaped (AlxGa1−x)InP Barriers — •Moritz Bommer, Matthias Reischle, Wolfgang Michael Schulz, and Peter Michler — Institut für Halbleiteroptik und Funktionelle Grenzflächen, Universität Stuttgart, Allmandring 3, 70569 Stuttgart
InP quantum dots (QD) are promising sources of single photons in the red part of the visible spectrum, and thus in the range of the highest sensitivity of current silicon detectors. Providing a single–photon source working at temperatures achievable by thermo–electric–cooling is the main goal of our current work.
The QDs were grown by self assembled metal organic vapor phase epitaxy and afterwards processed with chromium masks or mesas to allow for µ–PL measurements on single QDs. We have investigated the influence of aluminum (Al) containing barriers, raising the confinement of charge carriers in the QDs, to allow for operation at higher temperatures. Therefore, we have compared different barrier confinement potential shapes for different Al contents. With this approach we obtained single–dot photoluminescence at temperatures up to 140 K and could measure antibunching above liquid nitrogen temperature.