Berlin 2008 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 31: Poster II

HL 31.46: Poster

Dienstag, 26. Februar 2008, 16:30–19:00, Poster D

Inhomogeneous broadening of Raman LO/TO line in silicon nanowire samples — •Harald Scheel, Sevak Khachadorian, and Christian Thomsen — Institut für Festkörperphysik, Technische Universität Berlin, 10623 Berlin, Germany

We studied the Raman spectra of silicon nanowires as a function of excitation power, and find red-shifted and inhomogeneously broadened lines with increasing laser excitation power. A study of the local temperature by Stokes to anti-Stokes intensity ratios in our Raman spectra is inconsistent with temperatures determined by the Raman peak position considering anharmonic effects. We discuss this inconsistency and present an approach to merge the different results.