Berlin 2008 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 31: Poster II
HL 31.55: Poster
Dienstag, 26. Februar 2008, 16:30–19:00, Poster D
Lateral electrical contacts to single bismuth-selenide nanowires — •Saskia F. Fischer1, Markus Wahle1, Shadyar Farhangfar2, Jana Sommerlatte2, and Kornelius Nielsch2,3 — 1Electronic Materials and Nanoelectronics, Ruhr-University of Bochum, D-44780 Bochum, Germany — 2Max-Planck Institute of Microstructure Physics, D-06120 Halle, Germany — 3Institute of Applied Physics, University of Hamburg, D-20355 Hamburg, Germany
Nanoscale thermoelectric materials are of high interest to science and technology dealing with the conversion of heat to electricity, and vice versa. Recent increases in thermoelectric efficiency have been achieved in sub-micrometer scaled structures [1-3]. Bismuth telluride and bismuth selenide are particularly interesting for applications at room temperature [4]. Bismuth selenide nanowires arrays were grown by electrochemical deposition into anodic alumina templates with pore diameters of 25 nm, 50 nm, and 100 nm and lengths of 2 µm up to 10 µm. Subsequently the anowires were dissolved from the template in an aqueous NaOH solution and applied to prepatterned Si2O/Si substrates. Single nanowires were laterally contacted in four-terminal geometry by electron-beam lithography, Ti/Au electron-beam evaporation and lift-off processing. Electrical characterizations of the nanowire arrays and single nanowires are currently in progress. [1] R. Venkatasubramanian et al., Nature 413, 597 (2001), [2] T.C.Harman, et al. Science 297, 2229 (2002), [3] Y.-M. Lin and M.S. Dresselhaus, Phys. Rev. B 68, 075304 (2003). [4] H.J. Goldsmid, Thermoelectric Refrigeration (Plenum New York, 1964).