Berlin 2008 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 31: Poster II

HL 31.57: Poster

Dienstag, 26. Februar 2008, 16:30–19:00, Poster D

Magnetic properties of amorphous, p-type conducting CuCr_0.95Mg_0.05O₂ and CuCr_0.93Mg_0.05Mn_0.02O₂ — •Qingyu Xu¹, Heidemarie Schmidt¹, Shengqiang Zhou¹, Kay Potzger¹, Manfred Helm¹, Holger Hochmuth², Michael Lorenz², Christoph Meinecke², and Marius Grundmann² — ¹Forschungszentrum Dresden-Rossendorf, Institut für Ionenstrahlphysik und Materialforschung,Bautzner Landstraße 128, 01328 Dresden, Germany — ²Universität Leipzig, Fakultät für Physik und Geowissenschaften, Institut für Experimentelle Physik II, Linnéstrasse 5, D-04103 Leipzig, Germany

CuCr_0.95Mg_0.02O₂ is p-type oxide semiconductor with the highest conductivity [1]. We prepared conductive, polycrystalline and amorphous CuCr_0.95Mg_0.05O₂ and CuCr_0.93Mg_0.05Mn_0.02O₂ films on a-plane sapphire substrates by pulsed laser deposition under different O₂ partial pressure and substrate temperature. Hall measurements were performed to study the majority free charge carrier type in these films. The polycrystalline CuCr_0.95Mg_0.05O₂ and CuCr_0.93Mg_0.05Mn_0.02O₂ films are n-type conducting up to 290 K, while in amorphous CuCr_0.95Mg_0.05O₂ and CuCr_0.93Mg_0.05Mn_0.02O₂ films the type of majority free charge carriers changes from n-type to p-type around 270 K. The antiferromagnetic to paramagnetic transition was observed in both polycrystalline and amorphous CuCr_0.95Mg_0.05O₂ films at 25 K, while the CuCr_0.93Mg_0.05Mn_0.02O₂ films revealed no antiferromagnetic ordering. [1] R. Nagarajan et al. J. Appl. Phys. 89, 8022 (2001)