Berlin 2008 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 31: Poster II
HL 31.64: Poster
Tuesday, February 26, 2008, 16:30–19:00, Poster D
Mix-and-Match process for ballistic devices on epitaxial few-layer graphene — •Sonja Weingart1, Claudia Bock1, Ulrich Kunze1, Konstantin V. Emtsev2, Thomas Seyller2, and Lothar Ley2 — 1Werkstoffe und Nanoelektronik, Ruhr-Universität Bochum, D-44780 Bochum — 2Lehrstuhl für Technische Physik, Universität Erlangen-Nürnberg, D-91058 Erlangen
In this work we demonstrate a technique for the preparation of ballistic devices with precise geometric definition from epitaxial few-layer graphene. The technique combines the basic strategies for the fabrication of a strongly confined low-dimensional system: a) positive definition of nanostructures, b) a simple mix-and-match process for definition of contact areas and leads, c) a low-damage single-step plasma etch transfer. Starting material is few-layer graphene grown epitaxially on SiC(0001) by graphitization of the surface [1]. In a first process step alignment marks are realized by conventional UV-lithography and lift-off technique. Nanostructures are defined in a 70 nm-thick negative-tone resist (ma-N 2401) by high-resolution e-beam lithography. In the following process-step the geometries of the contact areas and leads are realized by conventional UV-lithography. The resulting resist structure is transferred by low-damage plasma etching using an inductively coupled O2/He plasma. A minimal line-width of 30 nm was achieved reproducibly. The reliability of the process is shown by the fabrication of cross-junctions formed by orthogonal adiabatically shaped leads.
[1] Th. Seyller et al., Surface Science 600, 3906 (2006).