Berlin 2008 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 31: Poster II
HL 31.68: Poster
Dienstag, 26. Februar 2008, 16:30–19:00, Poster D
Development of Al-doped ZnO-nanocrystals for applications in advanced cell concepts of organic photovoltaics — •Daniel Rauh1, Volker Lorrmann1, Maria Hammer2, Andreas Sperlich2, Moritz Liedke1, Carsten Deibel2, Ingo Riedel1, and Vladimir Dyakonov1,2 — 1Bavarian Centre for Applied Energy Research (ZAE Bayern), Functional Materials for Energy Technology, Am Hubland, D-97074 Würzburg — 2Experimental Physics VI, Physical Institute, Julius-Maximilian University of Würzburg, Am Hubland, D-97074 Würzburg
We developed Al doped ZnO-nanocrystals (nc-ZnO:Al) via wet chemical synthesis. XRD-analysis, electron spin (ESR) and electron-nuclear spin double resonance (ENDOR) confirm that nc-ZnO:Al grows in Wurtzite structure and aluminium enters the crystal on site of the Zn-atom. ESR experiments on blends of P3HT and nc-ZnO:Al confirm light-induced charge separation with resonances assigned to polarons on P3HT and electrons in the nc-ZnO:Al domain. Photoinduced absorption spectroscopy was applied to rationalize infiltration of P3HT into porous nc-ZnO:Al matrix: Spectra of bilayer structures reveal coexistence of positive polarons and triplet excitons while strong polaron formation is accompanied with complete quenching of triplet excitons (TE) for infiltrated ZnO:Al-matrices. Polaron formation and quenching of TE is ascribed to the enlarged interface in the bulk heterojunction. ENDOR-measurements as well as photoluminescence studies on pure ZnO:Al confirm that sodium, incorporated during synthesis, result in deep-level acceptor states in the middle of the band gap.