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14:15 |
HL 32.1 |
Towards quantification of the In-distribution in embedded InGaAs quantum dots — •Holger Blank, Dimitri Litvinov, Reinhard Schneider, Dagmar Gerthsen, Thorsten Passow, and Kurt Scheerschmidt
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14:30 |
HL 32.2 |
Nanoparticle size separation in a drying fluid droplet — •Matthias Offer, Cedrik Meier, Stephan Lüttjohann, Axel Lorke, and Hartmut Wiggers
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14:45 |
HL 32.3 |
Optical and structural properties of transition metal implanted ZnO nanowires — •Sven Müller, Carsten Ronning, MinJie Zhou, and Quan Li
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15:00 |
HL 32.4 |
Ion implanted GaAs nanowire pn junctions — •Katharina Wegener, Daniel Stichtenoth, Carsten Ronning, Christoph Gutsche, Werner Prost, and Franz Josef Tegude
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15:15 |
HL 32.5 |
InAs/GaAs(001) quantum dots, investigation of dot shape and composition with synchrotron X-ray diffraction. — •Andriy Zolotaryov, Andreas Schramm, Christian Heyn, and Wolfgang Hansen
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15:30 |
HL 32.6 |
Influence of the deposition rate on the InP quantum dot formation in Al0.20GaInP barriers — •Bjoern Jakobi
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15:45 |
HL 32.7 |
Low strain AlGaInAs Quantum Dots for Cavity Quantum Electrodynamic Experiments — •Christian Schneider, Andreas Loeffler, Stephan Reitzenstein, Sven Hoefling, and Alfred Forchel
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16:00 |
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15 min. break
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16:15 |
HL 32.8 |
Formation, atomic structure, and electronic properties of GaSb/GaAs quantum rings — •Rainer Timm, Andrea Lenz, Lena Ivanova, Holger Eisele, Ganesh Balakrishnan, Diana L. Huffaker, Ian Farrer, David A. Ritchie, and Mario Dähne
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16:30 |
HL 32.9 |
X−ray investigations on CoSi2 nano wires manufactured by focused ion beam synthesis — •Jörg Grenzer, Lothar Bischoff, and Andreas Biermanns
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16:45 |
HL 32.10 |
Limitations of In(Ga)As/GaAs quantum dot growth — •Andrea Lenz, Rainer Timm, Holger Eisele, Lena Ivanova, Roman L. Sellin, Huiyun Liu, Mark Hopkinson, Udo W. Pohl, Dieter Bimberg, and Mario Dähne
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17:00 |
HL 32.11 |
Electroluminescence of InP-quantum dots in Al0.20GaInP-barriers — •Wolfgang-Michael Schulz, Robert Roßbach, Björn Jakobi, Michael Wiesner, Michael Jetter, and Peter Michler
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17:15 |
HL 32.12 |
Self-assembled quantum dots grown by Molecular Beam Epitaxy on InP-substrate for single photon application at 1.55 µm — •Daniela Baierl, Roland Enzmann, Christian Jendrysik, Christian Seidel, Susanne Dachs, Gerhard Böhm, Ralf Meyer, Jonathan Finley, and Markus-Christian Amann
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17:30 |
HL 32.13 |
Growth of Sub-Monolayer Quantum Dots by MOCVD — •Franziska Luckert, Konstantin Pötschke, Till Warming, and Dieter Bimberg
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