Berlin 2008 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 33: III-V semiconductors II
HL 33.9: Vortrag
Mittwoch, 27. Februar 2008, 16:30–16:45, EW 201
Nanofabrication of surface templates for low and high density quantum dots formation — •Tino Pfau, Aleksander Gushterov, and Johann Peter Reithmaier — Technische Physik, INA, Universität Kassel, Heinrich-Plett-Str. 40, 34132 Kassel
To overcome statistical variations of the dot position and the dot size in a self-assembled dots formation process, surface templates with nanoscale dimensions are developed based on electron beam lithography and wet-chemical etching. In comparison to dry etching, wet chemical etching avoids crystal damage and defect related non-radiative recombination processes should play a much smaller role. Here, different wet chemical surface preparation methods are examined to create atomically flat surfaces on GaAs as well as to create etched hole densities higher than 1010 cm−2 as growth templates. The surfaces are characterized by scanning electron microscopy (SEM) and atomic force microscopy (AFM).