Berlin 2008 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 34: Semiconductor Laser
HL 34.3: Vortrag
Mittwoch, 27. Februar 2008, 14:45–15:00, EW 202
Laser properties of (GaIn)Sb heterostructures - a microscopic evaluation — •Christina Bückers1, Angela Thränhardt1, Stephan W. Koch1, Jörg Hader2, Jerome V. Moloney2, Marcel Rattunde3, Nico Schulz3, and Joachim Wagner3 — 1Fachbereich Physik und Wissenschaftliches Zentrum für Materialwissenschaften, Philipps-Universität Marburg, Renthof 5, 35032 Marburg, Germany — 2Optical Sciences Center, University of Arizona, Tucson, Arizona 85721, USA — 3Fraunhofer-Institut für Angewandte Festkörperphysik, Tullastraße 72, 79108 Freiburg, Germany
Semiconductor lasers emitting around 2 microns are of considerable interest in medical diagnostics, material processing or spectroscopic trace gas detection. GaSb-based (GaIn)Sb quantum well lasers are well suited for this wavelength range and promise excellent laser performance. On the basis of a microscopic many-particle theory, we predict optical gain spectra of such a (GaIn)Sb laser structure. The calculations show good agreement with the measurement, verifying that our model describes the material system with high precision. The obtained gain amplitude of the material system is remarkably large und we are enabled to attribute this feature mostly to band structure properties by a detailed comparison to simulations for an equivalent standard (GaIn)As structure.