Berlin 2008 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 34: Semiconductor Laser
HL 34.4: Vortrag
Mittwoch, 27. Februar 2008, 15:00–15:15, EW 202
Influence of low-absorption laser facets on catastrophic optical damage in AlGaInP lasers — •Marwan Bou Sanayeh1, Peter Brick1, Martin Reufer1, Bernd Mayer1, Martin Müller1, Wolfgang Schmid1, Mathias Ziegler2, Jens W. Tomm2, and Gerd Bacher3 — 1OSRAM Opto Semiconductors GmbH, Leibnizstrasse 4, 93055 Regensburg, Germany — 2Max-Born-Institut, Max-Born-Strasse 2A, 12489 Berlin, Germany — 3Universität Duisburg-Essen, Bismarckstrasse 81, 47057 Duisburg, Germany
AlGaInP lasers have emerged as the best candidates in the red spectral range for high-power applications like photodynamic therapy. However, catastrophic optical damage (COD) sets the ultimate limit for extracting high optical power out of the laser diodes. Over the past two decades, understanding and improving the COD effect has always been a challenge for scientists. In this work, complete characterization, detailed analysis, and performance improvement of AlGaInP lasers during COD are presented.
To study COD, microphotoluminescence mapping and focused ion beam analyses enabled the localization of the defects inside the resonator. Micro-Raman spectroscopy and real-time thermal imaging were used to study the physics behind COD, its related temperature dynamics, as well as associated defect and near-field patterns.
The knowledge of physics behind COD triggered a change in design of the near-facet region. We found that lasers with low-absorption facets design led to an increased COD level and an improvement in high-power laser performance.