Berlin 2008 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 35: Spin controlled transport II
HL 35.10: Vortrag
Mittwoch, 27. Februar 2008, 16:45–17:00, ER 164
Robust remanent spin injection in light emitting diodes via Schottky- and MgO-barriers at room temperature — •Stephan Hövel1, Nils C. Gerhardt1, Martin R. Hofmann1, Fang-Yuh Lo2, Dirk Reuter2, Andreas D. Wieck2, Ellen Schuster3, and Werner Keune3 — 1AG Optoelektronische Bauelemente und Werkstoffe, Ruhr-University Bochum, Germany — 2Lehrstuhl für angewandte Festkörperphysik, Ruhr-University Bochum, Germany — 3Laboratorium für Angewandte Physik, University Duisburg-Essen, Germany
We report on robust room temperature spin injection in GaAs/AlGaAs-light emitting diodes (LEDs) in a Faraday-geometry. Two different injectors based on a Fe/Tb-multilayer which exhibits a strong perpendicular magnetization in remanence have been grown [1]. Spin injection is accomplished by the Schottky-diode generated by the lowest Fe-layer and the n-AlGaAs and by a MgO-tunnel-barrier between the metal and semiconductor, respectively. For both cases a circular optical polarization degree of 4% is detected up to room temperature even at remanent magnetization, but the results of the tunneling-diode suggest a more stable behaviour of the injecting interface. This work has been supported by the DFG within the SFB491.
[1] N.C. Gerhardt et al, Appl. Phys. Lett. 87, 032502 (2005)