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Berlin 2008 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 36: Poster III

HL 36.30: Poster

Wednesday, February 27, 2008, 16:30–19:00, Poster D

Component Analysis and Optimization of Photonic Crystal Based Semiconductor Laser Diodes — •Helmut Zarschizky1, Lin Zschiedrich1,2, Jan Pomplun1,2, and Sven Burger1,21JCMwave GmbH, Haarer Straße 14a, 85640 Putzbrunn, Germany — 2Zuse Institute Berlin, Takustraße 7, 14195 Berlin, Germany

Due to the reasonably large photonic bandgap in semiconductor based photonic crystals widely tunable laser diodes seem to be an attractive application. Design and optimization of layer thicknesses, lateral laser channel width, dimension of the unit cell and orientation of the crystal lattice for wave guiding and resonator facets are carried out using FEM-based simulation software. 2D- and 3D-results give detailed suggestions on appropriate resonator designs for wavelength tuning ranges over 100 nanometers in the telecommunication band (1550 nm) and for gas sensing (about 1850 nm).

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