Berlin 2008 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 36: Poster III

HL 36.39: Poster

Wednesday, February 27, 2008, 16:30–19:00, Poster D

Structural and magnetic properties of Eu-, Ho- and Sm-implanted GaN — •Fang-Yuh Lo¹, Verena Ney², Andreas Ney², Alexander Melnikov¹, Dirk Reuter¹, Sébastien Pezzagna³, and Andreas D. Wieck¹ — ¹Lehrstuhl für Angewandte Festkörperphysik, Ruhr-Universität Bochum, Universitätsstr. 150, D-44780 Bochum — ²Experimentalphysik, Universität Duisburg-Essen, Lotharstr. 1, D-47057 Duisburg — ³RUBION, Ruhr-Universität Bochum, Universitätsstr. 150, D-44780 Bochum

GaN is a wide band gap semiconductor, which has many applications in high-power electronics as well as optoelectronics. Recently, GaN-based diluted magnetic semiconductors have attracted great interest because theoretical work predicted Curie temperatures above 300K. However, the experimental results are quite different and depend strongly on the fabrication methods. In our studies, the rare-earth elements, Eu, Ho and Sm, are introduced into GaN-based heterostructures by focused ion beam implantation. The structural and magnetic properties of the implanted material are studied.