Berlin 2008 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 36: Poster III
HL 36.45: Poster
Mittwoch, 27. Februar 2008, 16:30–19:00, Poster D
TEM Investigations on defect terminating SiN interlayers in (Al, In)GaN layer systems on sapphire substrate — •Martin Beer1, Josef Zweck1, Joachim Hertkorn2, Frank Lipski2, Peter Brückner2, Stephan Schwaiger2, and Ferdinand Scholz2 — 1Universität Ulm, Albert-Einstein-Allee 45, D-89081 Ulm, Germany — 2Universität Regensburg, Universitätsstr. 31, D-93051 Regensburg, Germany
To decrease the dislocation density in (Al,In)GaN layer systems for LEDs grown on sapphire substrates a defect terminating SiN interlayer was deposited at two different positions in the epitaxial layer grown by MOVPE. In the first series of samples the SiN layer was deposited directly on the AlN Buffer layer, in the second series it was inserted into the GaN layer about 350 nm above the substrate - film interface. The deposition time of the SiN layers was varied between 3 min and 7 min yielding to a fractional coverage of about 60 % to 90 %, respectively. Cross-sectioned samples of the differently grown structures were prepared and afterwards analysed in the TEM, e.g. by means of weak beam dark field imaging and HRTEM. The obtained results will be compared to etch pit density measurements.