Berlin 2008 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 43: Quantum dots and wires: Optical properties II

HL 43.1: Talk

Thursday, February 28, 2008, 14:00–14:15, EW 201

Influence of growth parameters on the photoluminescence linewidth of InGaAs/GaAs quantum dots — •Lewis Lingys, Aleksandar Gushterov, and Johann-Peter Reithmaier — Technische Physik, Institut für Nanostrukturtechnolgie u. Analytik, Universität Kassel

InGaAs/GaAs quantum dots are of great interest for studying light-matter interactions on a basic level also leading to new device applications like quantum dot (QD) lasers or single-photon sources. A problem still under investigation is to produce ensembles of QDs with a small size fluctuation in order to achieve a small photoluminescence (PL) linewidth. We present studies on how the PL linewidth is affected by variation of growth parameters for QDs structures grown by MBE. Dot density, dot size and optical properties are not easily tailored in a desired way as several mechanisms are in effect during epitaxial growth. III-V ratio, substrate temperature, nominal thickness of InGaAs layers and content of In have to be chosen correctly to produce a desired QDs structure. We present the influence of different growth parameters on the optical properties of the resulting QD structures with emphasis on the line width which is an indicator for the size dispersion. The results are compared with morphology data gained by atomic force microscopy.