Bereiche | Tage | Auswahl | Suche | Downloads | Hilfe

HL: Fachverband Halbleiterphysik

HL 44: Quantum dots and wires: preparation and characterization II

HL 44.2: Vortrag

Donnerstag, 28. Februar 2008, 17:00–17:15, EW 201

InN Nanocolumns - Electrical Properties and Site-Selective Growth — •Christian Denker, Friederich Limbach, Soenke Huels, Florian Werner, Joerg Malindretos, and Angela Rizzi — IV. Physikalisches Institut, Georg-August-Universität Göttingen, D-37077 Göttingen, Germany

The possible applications of Indium Nitride semiconductor nanocolumns in novel optoelectronic and photovoltaic devices as well as the fundamental material properties are better assessed on single nano-objects. In addition, selective growth of nanocolumns in a regular array is pursued with the aim of reducing ensemble masking effects in the measurements and facilitating further processing.

In the past we fabricated self-organised InN nanowires with a length of up to 2 µm and an aspect ratio up to 1:40 by molecular beam epitaxy (MBE). Single nanocolumns are contacted by e-beam lithography for measurements in a 4-point configuration. The resulting U-I curves will be presented.

For catalyst-free selective nucleation of the nanocolumns patterning of the natively oxidized Si(111) substrate is needed. As the standard process of SiN or SiO masking has not yet been successfully used in the MBE of InN, a new technique was applied. We show that the nucleation of InN can be inhibited by depositing a thin carbon layer, e.g. through e-beam exposure in a scanning electron microscope. This method will be optimised to grow arrays of well separated InN nanocolumns.

This work was supported, within the EU FP6, by the ERANET project NanoSci-ERA: NanoScience in the European Research Area