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HL: Fachverband Halbleiterphysik

HL 47: GaN: preparation and characterization I

HL 47.5: Vortrag

Donnerstag, 28. Februar 2008, 15:00–15:15, EW 202

InGaN Pyramids: Towards positioned quantum dots — •Clemens Wächter, Michael Jetter, Gareth Beirne, and Peter Michler — Institut für Halbleiteroptik und Funktionelle Grenzflächen, Allmandring 3, 70569 Stuttgart, Germany

InGaN quantum dots (QDs) are of high interest for quantum optics due to their large exciton binding energies, even more if the quantity of the QDs is controllable and the position is well known. This can be achieved for example by growing QDs on prepatterned substrates. In the nitride material system this prepattering can be reached by selective epitaxy of hexagonal pyramids on a SiO₂-masked GaN-template. The InGaN material is then deposited on these substrates, forming low dimensional structures on these pyramids. However, the research regarding these structures is still in progress. In this talk the recent efforts and results will be presented. Samples were prepared with varying InGaN growth temperature, growth pressure, cap structures and pyramid sizes. These samples were characterized using optical microscopy, scanning electron microscopy, time resolved (micro-)photoluminescense spectroscopy and cathodoluminescense spectroscopy. Using all these informations the current status and future developments will be presented.