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10:45 |
HL 49.1 |
Lasing modes in ZnO microwires — •Christian Czekalla, Jörg Lenzner, Rüdiger Schmidt-Grund, Bingqjang Cao, and Marius Grundmann
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11:00 |
HL 49.2 |
Influence of dielectric capping on the phololuminescence spectrum of ZnO nanowires nanowires — •Jan Richters, Tobias Voss, Ilja Rückmann, and Jürgen Gutowski
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11:15 |
HL 49.3 |
Optical and electrical characterization of acceptors implanted into ZnO — •Joachim Dürr, Daniel Stichtenoth, Sven Müller, Carsten Ronning, Amilcar Bedoya Pinto, Jörg Malindretos, Lars Wischmeier, and Tobias Voss
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11:30 |
HL 49.4 |
Random lasing in ZnO nanopowders — •Roman J.B. Dietz, Johannes Fallert, Felix Stelzl, Huijuan Zhou, Janos Sartor, Claus Klingshirn, and Heinz Kalt
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11:45 |
HL 49.5 |
DBR und RC-LED Strukturen im ZnSe-basierten Materialsystem — •Kai Otte, Carsten Kruse, Jens Dennemarck, Arne Gust und Detlef Hommel
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12:00 |
HL 49.6 |
Gain and dynamics in ZnO nanorod lasers — •Johannes Fallert, Roman J. B. Dietz, Felix Stelzl, Huijuan Zhou, Janos Sartor, Anton Reiser, Klaus Thonke, Rolf Sauer, Claus Klingshirn, and Heinz Kalt
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12:15 |
HL 49.7 |
Dynamics of charge carrier relaxation and recombination in high quality homoepitaxial-grown and single crystal ZnO — •Markus R. Wagner, Ute Haboeck, Axel Hoffmann, Stefan Lautenschläger, Joachim Sann, and Bruno K. Meyer
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12:30 |
HL 49.8 |
Asymmetry in the excitonic recombinations and impurity incorporation of the two polar faces of homoepitaxially grown ZnO films — •Joachim Sann, Stefan Lautenschläger, Niklas Volbers, Bruno K. Meyer, Markus R. Wagner, Ute Haboeck, and Axel Hoffmann
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12:45 |
HL 49.9 |
Stacking fault-related 3.31eV luminescence in zinc oxide — •M. Schirra, R. Schneider, A. Reiser, G.M. Prinz, M. Feneberg, J. Biskupek, U. Kaiser, C.E. Krill, R. Sauer, and K. Thonke
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