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HL: Fachverband Halbleiterphysik

HL 51: Poster IV

HL 51.11: Poster

Donnerstag, 28. Februar 2008, 16:30–19:00, Poster D

Electroluminiscence study of site-selective grown self-assembled InAs quantum dots — •Minisha Mehta, Dirk Reuter, Alexander Melnikov, and Andreas D. Wieck — Lehrstuhl für Angewandte Festkörperphysik, Ruhr-Universität Bochum, Universitätsstraße 150, D-44780 Bochum, Germany

Self-assembled InAs quantum dots (QDs) are envisioned as building blocks for the realization of novel nanoelectronic devices. For this purpose, the site-selective growth of InAs QDs is highly desirable. We present the results on site-selective growth of self-assembled InAs QDs on GaAs surface patterned by in-situ focused ion beam (FIB) implantation. Under well optimized conditions, a selective growth of single QD in the patterned holes with more than 50 % probability is achieved. Carrier injection and subsequent radiative recombination from site-selective grown InAs/GaAs self-assembled QDs is investigated by embedding the QDs in the narrow intrinsic region of a p-i-n structure. Electroluminescence spectra taken at 77 K show excited state interband transitions up to n=5 from the QDs. Financial support by the BMBF via the NanoQuit program is gratefully acknowledged.