Berlin 2008 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 51: Poster IV
HL 51.23: Poster
Donnerstag, 28. Februar 2008, 16:30–19:00, Poster D
De Haas-van Alphen effect in two-component two-dimensional electron systems — •X. Huang1, T. Windisch1, S. Dasgupta2, M. A. Wilde1, A. Fontcuberta i Morral2, M. Grayson2,3, G. Abstreiter2, and D. Grundler1 — 1Physik-Department E10, Tech. Univ. München, D-85747 Garching — 2Walter Schottky Institut, Tech. Univ. München, D-85747 Garching — 3Department of Electrical Engineering and Computer Science, Northwestern University, Evanston, Illinois 60208, USA
Two-component electron systems can be realized, e.g., in AlAs quantum wells, in which electrons occupy two X valleys in the ground state, or in Si/SiGe quantum wells [1] with two occupied Δ2 valleys. Applying a magnetic field in the direction perpendicular to the quantum wells leads in both cases to spin splitting and, in addition, to a valley splitting in the energy spectrum. A further example is the tunneling-coupled double-layer electron system in a GaAs heterostructure, where the layer degree of freedom plays the role of the pseudo-spin degree of freedom. To investigate the characteristics of the two-dimensional electron systems (2DESs) confined to a modulation-doped AlAs quantum well, we have studied the de Haas-van Alphen (dHvA) effect at 300 mK using highly sensitive micromechanical cantilever magnetometer (MCM).
We acknowledge financial support of the German Excellence Initiative via the "Nanosystems Initiative Munich (NIM)" and GR1640/1.
[1]M. A. Wilde, M. Rhode, Ch. Heyn, D. Heitmann, U. Zeitler, F. Schaeffler, R. J. Haug and D. Grundler, Phys. Rev. B 72, 165429 (2005)