Berlin 2008 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 51: Poster IV

HL 51.28: Poster

Thursday, February 28, 2008, 16:30–19:00, Poster D

On the doping of Si nanowires grown by molecular-beam epitaxy — •Pratyush Das Kanungo, Otwin Breitenstein, Peter Werner, Nikolai Zakharov, and Ulrich Goesele — Max Planck Institute of Microstructure Physics, Weinberg 2, Halle D06120, Germany

Silicon nanowires (NWs) are potential candidates as building blocks for new semiconductor devices and sensors. Because of their quasi one-dimensional structure, high surface-to-volume ratio and low number of defects, Si NWs are expected to have specific electrical properties. As an example, the resistivity might be influenced by quantum confinement effects as well as by surface states. In order to make devices based on NWs it is necessary to dope them as well as to form p-n or p-i-n junctions. We describe two different techniques to dope Si NWs and methods to determine their electrical behavior.

First, in-situ doping of Si NWs with boron (B) was successfully done in a molecular beam epitaxy (MBE) chamber. By controlling the B flux it was possible to dope the whole NW, as well as make p-n and p-i-n junctions with the substrate. Second, we also demonstrated an ex-situ doping by the spin-on-glass technique. In-situ electrical measurements of the NWs were performed to confirm the desired behavior.