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HL: Fachverband Halbleiterphysik

HL 51: Poster IV

HL 51.39: Poster

Donnerstag, 28. Februar 2008, 16:30–19:00, Poster D

Tunnelling process in ZnSe/ZnMnSe double-quantum-well structures — •Stephanie Jankowski, Tobias Niebling, and Wolfram Heimbrodt — Phillipps-University Marburg, Department of Physics and Matrial Science Center, Renthof 5, 35032 Marburg

Asymmetric ZnSe/ZnMnSe double-quantum-well (DQW) structures with different barrier width have been grown between ZnMnSe cladding layers on a (100) GaAs substrate with a ZnSe buffer. The ZnSe wells are under tensile strain in these DQW structures yielding the light-hole exciton states to be the energetically lowest lying states. This is different to earlier papers , where tunnelling of carriers and excitons have been studied in DQW structures made of diluted magnetic semiconductors with heavy hole excitons to be the lowest lying states. In an external magnetic field we were able to manipulate the barrier height due to Giant Zeeman effect of the ZnMnSe barriers. Hence we can study the tunnelling processes in these structures in dependence of the height and width of the barrier by photoluminescence, photomodulated reflectivity as well as time resolved measurements. Surprisingly, very different results to heavy hole tunnelling have been found. The obtained results and differences will be discussed in detail.