Berlin 2008 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 51: Poster IV
HL 51.40: Poster
Thursday, February 28, 2008, 16:30–19:00, Poster D
Epitaxial ferroelectric BTO/ZnO heterostructures — •Brandt Matthias1, Holger Hochmuth1, Michael Lorenz1, Nurdin Ashkenov1,2, Matthias Schubert3, Venkata Voora3, and Marius Grundmann1 — 1Universität Leipzig, Institut für ExperimentellePhysik II, Leipzig, Germany — 2Now at Opteg GmbH, Leipzig, Germany — 3Department of Electrical Engineering, University of Nebraska-Lincoln, Lincoln, U.S.A.
Ferroelectrics are a material class of increasing importance in electronics, including ferroelectric switches, capacitors, non–volatile memory elements, optical switches and thin film transistors. While the polarization in ferroelectric materials is switchable by external electric fields, wurtzite ZnO exhibits a permanent spontaneous polarization. Previously, polarization coupling effects have been observed by us in experiments on Pt/BTO/ZnO/Pt structures on Si [1]. Asymmetric current-voltage (I–V), capacitance-voltage (C–V) and field dependent polarization P(E) hysteresis loops were demonstrated [2]. Detailed investigations on the homogeneity of fabricated wafers have been carried out, and were compared to data obtained on Pt/BTO/Pt samples. Further a model of the polarization exchange coupling was developed, and is applied to analyze the experimental data. The model is tested on experimental P(E) curves obtained at different voltages and probe frequencies.
[1] B. N. Mbenkum et al.: Appl. Phys. Lett. 86, 091904 (2005).
[2] N. Ashkenov et al.: Thin Solid Films 486, 153-157 (2005).