Berlin 2008 – scientific programme

Parts | Days | Selection | Search | Downloads | Help

HL: Fachverband Halbleiterphysik

HL 51: Poster IV

HL 51.41: Poster

Thursday, February 28, 2008, 16:30–19:00, Poster D

Magneto-transport measurements on artifically structured ZnO epitaxial layers — •Matthias T. Elm, Stefan Lautenschläger, Torsten Henning, and Peter J. Klar — Institute of Experimental Physics, Justus-Liebig-University of Giessen, Germany

ZnO layers with a thickness of about 1000 nm were grown homoepitaxically on ZnO substrate by chemical vapor deposition. The layers are n-type with electron concentrations of about 10¹⁷ cm⁻³. Different parts of the as grown samples were artificially structured by photolithography. The patterns consist of regular arrays of holes with different hole diameters and spacings, which were transferred into the layer by chemical etching. In some of the samples the holes were filled in an additional preparation step with a metal, e.g. Au or Al, by either sputtering or electron beam evaporation. These structures were investigated by magneto-transport measurements in a temperature range from 2 to 280 K in external magnetic fields up to 10 T. The differences in the temperature-dependent behavior as well as in the magneto-resistance between samples with and without metal content are discussed.