Berlin 2008 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 51: Poster IV

HL 51.42: Poster

Donnerstag, 28. Februar 2008, 16:30–19:00, Poster D

Epitaxially grown artificially structured ZnO layers investigated by thermoelectric measurements — •Gert Homm¹, Jörg Teubert^1,2, Stefan Lautenschläger¹, Torsten Henning¹, Peter J. Klar¹, and Bruno K. Meyer¹ — ¹Institute of Experimental Physics I, Justus-Liebig-University Gießen, Germany — ²Department of Physics and Science Center, Philipps-University Marburg, Germany

ZnO layers of about 1000 nm thickness were grown homoepitaxially on ZnO substrates by chemical vapor deposition. The layers are n-type with electron concentrations of about 10¹⁷ cm⁻³. Stripes of the as grown samples were artificially structured by photolithography. The patterns consist of regular arrays of holes with different spacings and hole diameters. The patterns were transferred either by wet-chemical etching or by ion-beam etching. The Seebeck coefficient is measured in the temperature range of 50 to 300 K. The influence of the artificial structuring on the Seebeck coefficient is discussed.