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Berlin 2008 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 51: Poster IV

HL 51.44: Poster

Thursday, February 28, 2008, 16:30–19:00, Poster D

Artificially structured epitaxially grown ZnO layers investigated by transport measurements — •Markus Piechotka1, Matthias T. Elm1, Sebastian Eisermann1, Achim Kronenberger1, Thomas Wassner2, Torsten Henning1, Martin Eickhoff2, Peter J. Klar1, and Bruno K. Meyer11Institute of Experimental Physics I, Justus Liebig University, Heinrich Buff Ring 16, D 35392 Giessen, Germany — 2Walter Schottky Institut, Technische Universitaet Muenchen, Am Coulombwall 3, D-85748 Garching, Germany

Several n-type ZnO layers were grown heteroepitaxially on Al2O3 substrates either by MBE with a thickness of 300 nm to 400 nm on a 20 nm MgO buffer layer or by cathode sputtering with a thickness of 1100 nm. Stripes of the as grown samples were artificially structured by photolithography. Each pattern consists of two contact pads with a regular array of wires of the same width in between. The wire thickness varies throughout the series of patterns from 4 µm to 1000 µm whereas the total cross section area of the wires is kept constant. The patterns were transferred either by wet-chemical etching or by ion-beam etching. The resistance of the wire patterns was measured in the temperature range from 2 to 300 K and in magnetic fields of 0 to 10 T. The analysis of the resistivity as a function of wire width yields information about the depth of the surface damage caused during the etch process.

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