Berlin 2008 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 51: Poster IV

HL 51.46: Poster

Thursday, February 28, 2008, 16:30–19:00, Poster D

n-type doped ZnO nanorods for heterostructure application — •Janos Sartor, Hujuan Zhou, Johannes Fallert, Felix Stelzel, Roman J. B. Dietz, Mario Hauser, Claus Klingshirn, and Heinz Kalt — Institut für Angewandte Physik, Universität Karlsruhe(TH), Germany

ZnO is considered as a promising material for blue/ultraviolet (UV) light emitting diode (LED) or laser diode (LD) structures. Due to the difficulty of the growth of reproducible p-type ZnO, heterojunctions of n-type ZnO grown on p-type material are under intense investigation. We have reported in earlier work the growth of ordered, vertically aligned, dense arrays of single crystal ZnO nanorods with a chemical vapor transport method. In this work we present the growth of highly indium doped n-type ZnO nanorods on GaN thin films. Low temperature photoluminescence measurements show predominant emission in the UV region. Compared with the nominally undoped ZnO nanorods, the indium relevant donor bound exciton is overwhelming in the In-doped nanorods, while the A-free exciton can be observed, indicating the good crystal quality of the rods. Investigations on the luminescence properties as well as the possible lasing behavior from heterostructures are in progress.