Berlin 2008 – scientific programme

Parts | Days | Selection | Search | Downloads | Help

HL: Fachverband Halbleiterphysik

HL 51: Poster IV

HL 51.54: Poster

Thursday, February 28, 2008, 16:30–19:00, Poster D

Sputter deposition of ZnO thin films at high substrate temperatures — •Achim Kronenberger, Sebastian Eisermann, Andreas Laufer, Swen Graubner, Angelika Polity, and Bruno K. Meyer — I. Physikalisches Institut, Justus-Liebig-Universität Giessen, Heinrich-Buff-Ring 16, 35392 Giessen, Germany

For the use of sputter deposited ZnO thin films in semiconductor devices, not only the electrical behaviour but also to maintain high crystal quality of the deposited films is important.

Pure ZnO thin films have been prepared on quartz glass and sapphire substrates by radio-frequency (RF) sputtering using a ceramic ZnO target. The substrate-temperature during the deposition could be adjusted from RT up to 735 °C. Argon was used as sputter-gas and oxygen as reactive-gas to change the stoichiometry of the deposited thin films.

The crystallinity of the deposited films has been analysed by XRD measurements. For optical and electrical characterisation optical transmission and Hall-effect measurements have been performed. To investigate impurities the films have been analysed by EDX and SIMS.

The focus was set on the electrical and optical properties of the deposited ZnO thin films and their changing behaviour in the cause of the different deposition parameters such as gas pressures, substrate temperature and rf-power. The aim was to gain control over changing the resistivity in a wide range, while keeping the films transparent in the visible region of the electromagnetic spectra and simultaneous maintain a high crystal quality.