Berlin 2008 – scientific programme

Parts | Days | Selection | Search | Downloads | Help

HL: Fachverband Halbleiterphysik

HL 51: Poster IV

HL 51.55: Poster

Thursday, February 28, 2008, 16:30–19:00, Poster D

Polycrystalline Mn-alloyed indium tin oxide films — •Camelia Scarlat¹, Heidemarie Schmidt¹, Qingyu Xu¹, Mykola Vinnichenko¹, Andreas Kolitsch¹, Manfred Helm¹, and Felicia Iacomi² — ¹Forschungszentrum Dresden-Rossendorf e.V., Bautzner Landstraße 128, 01328 Dresden, Germany — ²Al. I. Cuza University, Faculty of Physics, Carol I, 700506, Iasi, Romania

Magnetic ITO films are interesting for integrating ITO into magneto-optoelectronic devices. We investigated n-conducting indium tin oxide (ITO) films with different Mn doping concentration which have been grown by chemical vapour deposition using targets with the atomic ratio In:Sn:Mn=122:12:0, 114:12:7, and 109:12:13 [1]. The average film roughness ranges between 30 and 50 nm and XRD patterns revealed a polycrystalline structure. Magnetotransport measurements revealed negative magnetoresistance for all the samples, but high field positive MR can be clearly observed at 5 K with increasing Mn doping concentration. Spectroscopic ellipsometry (SE) has been used to prove the existence of midgap states in the Mn-alloyed ITO films revealing a transmittance less than 80%. A reasonable model for the ca. 250 nm thick Mn-alloyed ITO films has been developed to extract optical constants from SE data below 3 eV. Depending on the Mn content, a Lorentz oscillator placed between 1 and 2 eV was used to model optical absorption below the band gap.[1]C. Baban et al. E-MRS 2007, Straßbourg.