Berlin 2008 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 51: Poster IV
HL 51.56: Poster
Donnerstag, 28. Februar 2008, 16:30–19:00, Poster D
The structural impact of Mn implantation on a ZnO host lattice and the magnetic interaction of the implanted Mn ions studied by Raman scattering and Electron Paramagnetic Resonance — •Marcel Schumm1, Martin Koerdel1, Sven Mueller2, Hayo Zutz2, Carsten Ronning2, Jan Stehr3, Detlev M. Hofmann3, and Jean Geurts1 — 1Physikalisches Institut, Universität Würzburg, Am Hubland, 97074 Würzburg, Germany — 2II. Physikalisches Institut, Universität Göttingen, Friedrich-Hund-Platz 1, 37077 Göttingen, Germany — 3Physikalisches Institut, Universität Giessen, Heinrich-Buff-Ring 16, 35392 Giessen, Germany
We study the magnetic and structural properties of Mn implanted ZnO by Raman scattering and Electron Paramagnetic Resonance for Mn contents from 0.1% to 4%. EPR reveals that the Mn ions substitutionally occupy Zn sites in the ZnO Wurtzite lattice. The Mn ions in the implanted layer show an antiferromagnetic dipolar interaction which results in broad, unstructured EPR spectra. No secondary phases are detected with EPR, Raman, TEM, or XRD. In the low temperature Raman spectra, scattering from a magnetic excitation is observed and studied for temperatures 5K < T < 200K. Raman spectroscopy also yields detailed information on the Mn incorporation and the induced disorder. Spectral features related to the Mn implantation exhibit a strong dependence on the Mn content and the applied annealing steps (up to 900°C). They allow the distinction between implantation damage and impurity induced disorder, and identification of one peak as a candidate for a localized vibration mode of Mn in ZnO.