Berlin 2008 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 51: Poster IV

HL 51.57: Poster

Thursday, February 28, 2008, 16:30–19:00, Poster D

Effect of Se predeposition on the electronic and structural porperties of n-ZnSe layers grown on n-GaAs(001) by molecular beam epitaxy — •Alexander Frey, Suddhosatta Mahapatra, Claus Schumacher, Laurens W. Molenkamp, and Karl Brunner — Universität Würzburg

We have fabricated n-doped ZnSe layers on n-GaAs(001) wafers by molecular beam epitaxy with different conditions employed at the II-VI growth start. The samples have been studied by RHEED, HRXRD, defect etching, temperature dependent I-V measurements through the n-ZnSe/n-GaAs interface and electrochemical C-V profiling. It is found that controlled deposition of selenium in the fractional monolayer range reduces the conduction band offset at the heterointerface from 470meV (Zn-rich interface) down to 65meV, while at the same time improving the structural quality of the layers. Such structures with low offset could be employed for efficient spin injection from ZnSe based dilute magnetic semiconductors into GaAs.