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HL: Fachverband Halbleiterphysik

HL 51: Poster IV

HL 51.58: Poster

Donnerstag, 28. Februar 2008, 16:30–19:00, Poster D

Investigation and analysis of ZnS substrates — •Oliver Graw¹, Stefan Lautschläger¹, Joachim Sann¹, Niklas Volbers¹, Swen Graubner¹, Andreas Laufer¹, Dietrich Schwabe¹, Bruno K. Meyer¹, Jürgen Bläsing² und Alois Krost² — ¹I. Physics Institute, Justus-Liebig-University, Giessen, Germany — ²Institut for Experimental Physics, Otto-von-Guericke University, Magdeburg, Germany

ZnS with its direct bandgap of 3.6 eV at room temperature and its cubic crystal structure is an suitable candidate material for optoelectronic devices in the UV region. It has some advantages compared to its direct opponents ZnO and GaN for example its lack of crystal field or piezo electricity. We investigated commercially available ZnS single crystals, obtained from different suppliers, regarding to structural quality, photoluminescence, impurity content and electric properties. Comparisons with single crystals grown in our institute have been undertaken.