Berlin 2008 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 54: Si/Ge

HL 54.12: Vortrag

Freitag, 29. Februar 2008, 13:30–13:45, EW 202

Diffusion of Si and Ge in SiGe-isotope structures — •Rene Kube¹, Hartmut Bracht¹, John Lundsgaard Hansen², and Arne Nylandsted Larsen² — ¹Institute of Materials Physics, University of Münster, Germany — ²Department of Physics and Astronomy, University of Aarhus, Denmark

The diffusion of Si and Ge in SiGe isotope heterostructures with Ge contents x = 0, 0.05, and 0.25 at.% were performed at temperatures between 870 and 1270 deg C. The concentration profiles of the stable Si- and Ge-isotopes were recorded by means of time-of-flight secondary ion mass spectrometry (Tof-SIMS). For all compositions, an Arrhenius type temperature dependence of diffusion was observed. The activation enthalpy of Si diffusion is equal to that of Ge diffusion. However, the preexponential factor of Si diffusion is lower. Our results are compared to radiotracer diffusion studies reported recently.