Berlin 2008 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 54: Si/Ge

HL 54.16: Vortrag

Freitag, 29. Februar 2008, 14:30–14:45, EW 202

MBE-growth and characterization of highly P doped delta layers in silicon — •Ulrich Abelein, Peter Iskra, Martin Schlosser, Torsten Sulima, and Ignaz Eisele — Universtität der Bundeswehr München, Institut für Physik, Werner-Heisenberg-Weg 39, 85577 Neubiberg, Germany

The controlled and reproducible growth of highly doped and ultra thin delta layers in silicon by MBE is an important task for the study of a wide range of phenomena in semiconductor physics (like resonant tunneling) as well as for the development of novel devices (like the TFET or the vertical I-MOS).

While the fabrication of boron doped delta layers with excellent electrical properties is quite well understood, the preparation of phosphorus doped delta layers is more difficult. High phosphorus doping leads to the formation of phosphorus clusters which cause crystal defects and degenerate electrical properties. In this work 3 nm thick delta layers with doping levels > 10²⁰ cm⁻³ were grown by MBE and characterized using secondary ion mass spectroscopy (SIMS). Furthermore such delta layers were used to fabricate triangular barrier diodes (TBD, i. e. p⁺-i-n⁺δ-i-p⁺ layer stacks). The electrical characteristics of these test devices show a very good barrier formation by the delta layers which indicates good crystal quality.