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10:30 |
HL 54.1 |
Defect Formation Energies without the Band-Gap Problem: Combining DFT and GW for the Silicon Self-Interstitial — •Patrick Rinke, Anderson Janotti, Chris G. Van de Walle, and Matthias Scheffler
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10:45 |
HL 54.2 |
Point defects in germanium - theory and experiment — •Sibylle Gemming, Clemens Wündisch, and Matthias Posselt
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11:00 |
HL 54.3 |
Red-shift in SiNW Raman spectra - influence from thermal properties — •Sevak Khachadorian, Harald Scheel, and Christian Thomsen
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11:15 |
HL 54.4 |
Atomistic simulation of amorphous germanium — •Alice-Agnes Gabriel and Matthias Posselt
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11:30 |
HL 54.5 |
Hydrogen passivation of low temperature polycrystalline silicon thin films for electronic applications — •Christian Jaeger, Tobias Antesberger, Michael Scholz, Matthias Bator, and Martin Stutzmann
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11:45 |
HL 54.6 |
Proton irradiation of germanium isotope multilayer structures — •Sebastian Schneider, Hartmut Bracht, Martin Petersen, John Lundsgaard Hansen, and Arne Nylandsted Larsen
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12:00 |
HL 54.7 |
Structural and electronic properties of ultra-thin polycrystalline Si layers on glass prepared by aluminum-induced layer exchange — •Tobias Antesberger, Christian Jäger, Michael Scholz, Chiara Cordioli, and Martin Stutzmann
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12:15 |
HL 54.8 |
Oxidation and graphitization of 6H-SiC (0001) — Maxim Eremtchenko, Anita Neumann, Jens Uhlig, Rolf Öttking, Roland J. Koch, Katharina Kloeckner, Thomas Haensel, Syed Imad-Uddin Ahmed, and •Juergen A. Schaefer
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12:30 |
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15 min. break
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12:45 |
HL 54.9 |
Grain boundary conduction in undoped laser-crystallized polycrystalline silicon-germanium thin films — •Lars-Peter Scheller, Moshe Weizman, Norbert H. Nickel, and B. Yan
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13:00 |
HL 54.10 |
Remote plasma process with independent control of physical and chemical etching of Si / Ge — •Helmut Lochner, Martin Amberger, Therese Chabert, Martin Sterkel, Walter Hansch, Markus Reinl, and Ignaz Eisele
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13:15 |
HL 54.11 |
Electrical and optical properties of laser-crystallized polycrystalline silicon-germanium thin films — •Moshe Weizman, Lars-Peter Scheller, Norbert Nickel, and Baojie Yan
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13:30 |
HL 54.12 |
Diffusion of Si and Ge in SiGe-isotope structures — •Rene Kube, Hartmut Bracht, John Lundsgaard Hansen, and Arne Nylandsted Larsen
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13:45 |
HL 54.13 |
Dopant-induced states in two-dimensional semiconductors — •Philipp Ebert, Sebastian Landrock, and Knut Urban
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14:00 |
HL 54.14 |
Phosphorus doping of Si nanocrystals — •Andre R. Stegner, Rui N. Pereira, E. Ulrich Stützel, Hartmut Wiggers, Martin S. Brandt, and Martin Stutzmann
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14:15 |
HL 54.15 |
Diffusion and defect reactions between donors, carbon and vacancies in germanium — •Hartmut Bracht, Sergej Brotzmann, John Lundsgaard Hansen, and Arne Nylandsted Larsen
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14:30 |
HL 54.16 |
MBE-growth and characterization of highly P doped delta layers in silicon — •Ulrich Abelein, Peter Iskra, Martin Schlosser, Torsten Sulima, and Ignaz Eisele
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14:45 |
HL 54.17 |
Einfluss der Dotierung auf die elastischen Eigenschaften von Silizium — •Nicole Santen und Reiner Vianden
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