Bereiche | Tage | Auswahl | Suche | Downloads | Hilfe

HL: Fachverband Halbleiterphysik

HL 55: GaN: preparation and characterization II

HL 55.10: Vortrag

Freitag, 29. Februar 2008, 13:00–13:15, ER 164

The role of V-shaped pits in (AlGaIn)N LED structures — •Lars Hoffmann, Heiko Bremers, Holger Jönen, Uwe Rossow, and Andreas Hangleiter — Institute of Applied Physics, Technical University of Braunschweig, Germany

Despite the high density of threading dislocations generally found in group-III-nitride semiconductors, the light emission efficiency of GaInN/GaN quantum well (QW) structures is exceptionally high at room temperature. Therefore, nonradiative recombination processes of charge carriers in a QW must be suppressed. This can be explained by our V-shaped pit model, where every threading dislocation is decorated with a hexagonal V-shaped pit. The QWs inside a V-shaped pit are thinner compared with the QWs on c-plane. Thus the effective band gap is significant larger and the charge carriers will be kept away from the threading dislocations. In our GaInN/GaN QW structures with high internal quantum efficiency we find in TEM well-controlled V-shaped pits around the dislocations. In order to clarify the situation for commercial devices we investigated blue and green LEDs from various suppliers. We find that V-shaped pits are decorating virtually all threading dislocations in the QW region. This indicates that suppression of nonradiative recombination by V-shaped pits may be a desirable mechanism for achieving high light emission efficiency. We also discuss the effect of pits in GaN/AlGaN QW structures, where the typical emission efficiency is much lower than for GaInN/GaN structures.