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10:30 |
HL 55.1 |
Time dependent changes of the spontaneous polarization field in GaN investigated via UHV-cathodoluminescence and photoluminescence — •Martina Finke, Daniel Fuhrmann, Holger Jönnen, Uwe Rossow, and Andreas Hangleiter
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10:45 |
HL 55.2 |
Influence of Si and Mg on the growth mechanism of GaN nanorods on Si (111) — •Florian Furtmayr, Christoph Stark, Martin Stutzmann, Martin Eickhoff, Jordi Arbiol, and Joan Ramon Morante
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11:00 |
HL 55.3 |
Optische Untersuchungen zum exzitonischen Transport in GaN Epitaxieschichten — •M. Noltemeyer, F. Bertram, J. Christen, A. Dadgar, A. Krost und O. Schulz
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11:15 |
HL 55.4 |
In-situ investigation on the surface electronic structure of GaN(0001)-2×2 — •Richard Gutt, Pierre Lorenz, Marcel Himmerlich, Juergen A. Schaefer, and Stefan Krischok
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11:30 |
HL 55.5 |
Properties of GaN-based thin film LEDs grown by MOVPE in dependence on the Si substrate orientations — •F. Schulze, A. Dadgar, S. Fritze, J. Blaesing, M. Wieneke, A. Diez, and A. Krost
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11:45 |
HL 55.6 |
Impact of seed and buffer layer growth on the quality of AlGaN on Si(111) — •P. Saengkaew, A. Diez, M. Noltermeyer, J. Blaesing, B. Bastek, F. Bertram, A. Dadgar, J. Christen, and A. Krost
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12:00 |
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15 min. break
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12:15 |
HL 55.7 |
Luminescence Characterization of GaN/InGaN Micro-disk Structures on Silicon — •A. Franke, F. Bertram, J. Christen, A. Dadgar, A. Krost, K. X. Lin, S.L. Teo, and S. Tripathy
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12:30 |
HL 55.8 |
Degradation of InGaN quantum wells during high temperature growth steps — •Holger Jönen, Daniel Fuhrmann, Daniel Dräger, Lars Hoffmann, Heiko Bremers, Uwe Rossow, and Andreas Hangleiter
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12:45 |
HL 55.9 |
Spatial distribution of structural defects in GaN — •I. Tischer, M. Schirra, M. Feneberg, G.M. Prinz, R. Sauer, K. Thonke, T. Wunderer, J. Hertkorn, F. Lipski, P. Brückner, F. Scholz, A. Chuvilin, U. Kaiser, I. Knoke, and E. Meissner
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13:00 |
HL 55.10 |
The role of V-shaped pits in (AlGaIn)N LED structures — •Lars Hoffmann, Heiko Bremers, Holger Jönen, Uwe Rossow, and Andreas Hangleiter
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13:15 |
HL 55.11 |
Influence of anisotropic strain on excitonic transitions in a-plane GaN films — Marcus Röppischer, •Carsten Buchheim, Rüdiger Goldhahn, Gerhard Gobsch, Armin Dadgar, Matthias Wieneke, Jürgen Bläsing, and Alois Krost
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13:30 |
HL 55.12 |
SNOM studies of GaInN/GaN and GaN/AlGaN QW structures — •Peter Clodius, Frank Hitzel, Daniel Fuhrmann, Carsten Netzel, Holger Jönen, Lars Hoffmann, Heiko Bremers, Uwe Rossow, and Andreas Hangleiter
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