HL 8: Interfaces/ surfaces
Montag, 25. Februar 2008, 14:00–15:00, EW 201
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14:00 |
HL 8.1 |
Influence of group-V exchange processes and Sb segregation on the interface quality of GaSb/GaAs quantum wells — •Rainer Timm, Andrea Lenz, Lena Ivanova, Holger Eisele, Ian Farrer, David A. Ritchie, Ganesh Balakrishnan, Diana L. Huffaker, and Mario Dähne
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14:15 |
HL 8.2 |
Nano- and atomic-scale potential fluctuations in two-dimensional semiconductors — •Sebastian Landrock, Ying Jiang, Kehui Wu, Enge Wang, Knut Urban, and Philipp Ebert
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14:30 |
HL 8.3 |
Deoxidation and surface structure of InGaN(0001) — •C. Friedrich, V. Hoffmann, N. Esser, M. Kneissl, and P. Vogt
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14:45 |
HL 8.4 |
Schottky Barrier Height Engineering of NiSi/Si Contacts by Dopant Segregation — Christoph Urban, •Qing-Tai Zhao, Marcel Müller, Christian Sandow, and Siegfried Mantl
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