Berlin 2008 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 9: ZnO: Preparation and characterization I
HL 9.3: Vortrag
Montag, 25. Februar 2008, 15:30–15:45, EW 201
Homoepitaxial growth of ZnO thin film by pulsed laser deposition (PLD) — •Matthias Brandt1, Holger von Wenckstern1, Holger Hochmuth1, Michael Lorenz1, Gisela Biehne1, Gabriele Benndorf1, Christoph Meinecke1, Tilman Butz1, Heidemarie Schmidt1,2, Andreas Rahm1,3, and Marius Grundmann1 — 1Universität Leipzig, Semiconductor Physics Group, Institut für ExperimentellePhysik II, Leipzig, Germany — 2now at Forschungszentrum Dresden–Rossendorf, Dresden, Germany — 3now at Solarion AG, Leipzig, Germany
Homoepitaxy has proven to improve the structural quality of ZnO thin films considerably compared to heteroepitaxy [1]. In this work the transport properties of phosphorous doped ZnO thin films, grown by pulsed–laser deposition (PLD) on thermally pretreated hydrothermally grown ZnO single crystal substrates are reported. Atomic force microscopy (AFM), high resolution X–ray diffraction and Rutherford backscattering (RBS) channeling measurements have been employed to analyse the morphological and structural properties of the ZnO:P thin films. Steps of height c/2 are visible in AFM images of all samples. For an oxygen partial pressure of 0.1 mbar two–dimensional growth was found. RBS–Channeling of a ZnO:P film shows a minimum yield of 0.034 which is comparable to that of an annealed substrate (0.033). Hall effect measurements revealed that all as–grown ZnO:P thin films are n–type. Peak mobilities of 800 cm2/Vs have been observed around 70 K, being in line with the high structural quality of the samples.
[1] H. v. Wenckstern et al.: phys. stat. sol. (RRL) 1, 129 (2007).