Berlin 2008 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 9: ZnO: Preparation and characterization I

HL 9.4: Vortrag

Montag, 25. Februar 2008, 15:45–16:00, EW 201

Cathodoluminescence on homoepitaxially grown phosphorus doped ZnO epilayers — •Jan Zippel, Holger von Wenckstern, Gabriele Benndorf, Matthias Brandt, Michael Lorenz, Christoph Meinicke, and Marius Grundmann — Universität Leipzig, Institut für Experimentelle Physik II, Linnéstraße 5, 04103 Leipzig

Phosphorus doped ZnO thin films were grown homoepitaxially by pulsed-laser deposition (PLD). The hydrothermal ZnO substrates were heat treated in oxygen ambient (850 mbar) at 1000°C for 2 h which results in a vicinal surface perfectly suited for epitaxy [1]. PLD-targets with different content of phosphorus were used(1 wt.%, 0.1 wt.%, 0.01 wt.%) for thin film deposition. Additionally we change the oxygen partial pressure systematically from 0.0003 mbar to 0.1 mbar. All samples were annealed (800 W, 10 min, 700 mbar N2).

In this contribution we compare low temperature (10K) cathodoluminescence (CL) of the as-grown and the annealed state in dependence on the phosphorus content and the oxygen partial pressure. Typical CL spectra are dominated by peaks related to the band edge and peaks related to deep impurities, respectively. We find that the red band dominates the spectra for high oxygen partial pressure independent of the phosphorus content whereas the green band is significant for low oxygen partial pressure and high phosphorus content.

[1] H. von Wenckstern, H. Schmidt, C. Hanisch, M. Brandt, C. Czekalla, G. Benndorf, G. Biehne, A. Rahm, H. Hochmuth, M. Lorenz and M. Grundmann, phys. stat. sol. (RRL) {1}, 129 (2007)