Berlin 2008 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 9: ZnO: Preparation and characterization I

HL 9.6: Vortrag

Montag, 25. Februar 2008, 16:15–16:30, EW 201

Growth and doping of ZnO — •Stefan Lautenschläger, Joachim Sann, Niklas Volbers, Jan E. Stehr, Andreas Laufer, Thomas Leichtweiss, and Bruno K. Meyer — I.Physikalisches Institut, Justus Liebig Universität Gießen, Deutschland

The so far not reliably resolved acceptor doping of ZnO is clearly the main obstacle for the successful development of working devices based on ZnO. We report on the possibilities of acceptor doping during the CVD growth of ZnO. To achieve the incorporation of an acceptor we used the group V elements arsenic and nitrogen. We investigated mainly epitaxially grown thin films, some comparison with Ion- implanted samples have been undertaken. All the samples have been analyzed using photoluminescence spectroscopy, secondary ion mass spectrometry, atomic force microscopy, X-Ray photoelectron spectroscopy (XPS) and scanning electron microscopy. Especially the As- doped and implanted samples have been investigated with XPS to obtain information about the lattice site the dopant occupies.