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MA: Fachverband Magnetismus

MA 18: Poster I : Bio Magn. (1-2); Mag.Imgaging (3-9); Magn. Semiconductors (10-16); Half Metals & Oxides (17-20); Coupl.Phenomena (21-27); Magn. Mat. (28-41); Micro & Nanostr. Magn. Materials (42-61); Micro Magn. (62-64); Surface Magnetism (65-70); Transport Phenomena (71-85)

MA 18.56: Poster

Dienstag, 26. Februar 2008, 15:15–18:30, Poster E

Growth parameters and transport properties of WC and PdC nanowires prepared in a Dual Beam Microscope — •Detlef Spoddig1, Kristian Schindler1, Peter Rödiger1, Jose Barzola-Quiquia1, Holger Motzkau1, Katharina Fritsch1, Hans Mulders2, and Pablo Esquinazi11Abteilung für Supraleitung und Magnetismus, Institut für Experimentelle Physik II, Universität Leipzig, Linnéstr. 5, D-04103 Leipzig, Germany — 2FEI Electron Optics, Achtseweg Noord 5, 5651GG AE Eindhoven, The Netherlands

Here we present investigations on the growth conditions and the electrical transport properties of Tungsten Carbon (WC) and Palladium Carbon (PdC) nanostructures on Si substrates using a focused ion beam and a scanning electron microscope. In-situ energy dispersive x-ray characterizations reveal that electron beam induced WC and PdC nanostructure depositions (EBID) show a lower metal concentration (below 3 at.%) than in ion beam induced deposition (IBID) (above 20). For PdC the growth pattern and the Pd/C content were optimized by adjusting the deposition temperature of the precursor material. In-situ measurements of the resistivity as a function of thickness reveal a minimum at 200 nm. The lowest resistivity obtained for the PdC and WC is two orders of magnitude higher than the bulk values. The EBID samples show a non-metallic behaviour due to the low metal content. The temperature and magnetic field dependence of the IBID structures reveal a behaviour similar to disordered or granular conductors. The upper critical field and current density of the WC structures were measured below the superconducting critical temperature of 5 K.

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DPG-Physik > DPG-Verhandlungen > 2008 > Berlin