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MA: Fachverband Magnetismus

MA 21: Magnetic Thin Films II

MA 21.3: Vortrag

Mittwoch, 27. Februar 2008, 14:30–14:45, H 1012

Characterization and nanopatterning of Ni₂MnIn Heusler films — •Jan M. Scholtyssek, Jeannette Wulfhorst, Ulrich Merkt, and Guido Meier — Institut für Angewandte Physik und Zentrum für Mikrostrukturforschung, Universität Hamburg, Jungiusstr. 11, 20355 Hamburg

The Heusler alloy Ni₂MnIn is a promising material as spin injector because of its predicted half-metallicity at the interface to InAs. We grow thin films of this Heusler alloy by thermal coevaporation of Nickel and the alloy MnIn. The alloy is grown on Si₃N₄ membranes and amorphous carbon films for transmission-electron microscopy (TEM) as well as on Si and InAs. The degree of the transport spin polarization of the films grown on Si(100), InAs(100) and in-situ cleaved (110) surfaces of InAs is determined by point-contact Andreev reflection spectroscopy (PCAR) [1]. The almost perfect lattice match between InAs and Ni₂MnIn supports highly oriented growth, as we have proven by electron diffraction under grazing incidence [2]. Lateral spin valves with Heusler electrodes are lithographically defined. In view of the temperature-sensitivity of the optical and electron-beam resists, the samples are grown at substrate temperatures of 50 ^∘C and annealed up to 400 ^∘C afterwards. The post-growth annealing process is investigated in situ in the TEM using transmission-electron diffraction on structured samples grown on Si₃N₄ membranes.
L. Bocklage, J.M. Scholtyssek, U. Merkt, and G. Meier, J. Appl. Phys. 101 09J512 (2007). [2] J.M. Scholtyssek, L. Bocklage, R. Anton, U. Merkt, and G. Meier, J. Magn. Magn. Mat. 316, e923 (2007).