Berlin 2008 – scientific programme

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MA: Fachverband Magnetismus

MA 23: Spinelectronics/ Spininjection in Heterostructures

MA 23.7: Talk

Wednesday, February 27, 2008, 18:15–18:30, H 1028

Transport properties of embedded MgO-based ferromagnetic MIS diodes for silicon spintronics — •Thomas Uhrmann¹, Theodoros Dimopoulos¹, Daniel Schwarz¹, Vlado Lazarov², Amit Kohn², Sascha Weyers³, Uwe Paschen³, and Hubert Brückl¹ — ¹Austrian Research Centers GmbH - ARC, Nano System Technologies, Donau-City-Str. 1, 1220 Wien, Austria — ²Department of Materials, University of Oxford, Parks Road, OX1 3PH, U.K. — ³Fraunhofer Gesellschaft, Finkenstr. 61, 45057 Duisburg, Germany

The major challenges in the field of semiconductor spin-electronics is the efficient electrical injection of spin polarized carriers into the semiconductor, their manipulation and subsequent detection.

Here we will focus on the electrical characterization of embedded sub-µm MIS tunneling diodes dedicated for spin injection and detection in silicon, using MgO as tunneling barrier. The conductivity mismatch theory predicts, that only within a narrow window of resistance values optimized spin injection efficiency is obtained. With respect to this, we report the influence of the tunneling barrier thickness (varied between 0.5 and 2.5 nm) and of the n- and p-doping density (from 10¹⁵ to 10¹⁸ cm⁻³) on the electrical transport properties of isolated cells and injector-collector pairs. For this we used current-voltage measurements as a function of the temperature and of the magnetic field. The effect of the annealing, up to 400^oC, on the transport and structural properties of the diodes is also discussed.

We acknowledge support from the EU project EMAC-Strep 017412.