Bereiche | Tage | Auswahl | Suche | Downloads | Hilfe

MA: Fachverband Magnetismus

MA 32: Postersession II: Spinstruct./Phase Trans. (1-10); Spinelectronics (11-15); Thin Films (16 - 36); Particles/Clusters (37-45); Multiferroics (46-54); Spindynamics/Spin Torque (55 - 76); Post Deadlines (77-79)

MA 32.11: Poster

Freitag, 29. Februar 2008, 11:15–14:00, Poster E

Ab initio investigations of Fe/GaAs(110) interfaces with respect to electronic transport — •Anna Grünebohm, Heike C. Herper, and Peter Entel — Fachbereich Physik, Universität Duisburg-Essen, Duisburg

Fe/GaAs is a candidate for spintronic devices because of the high Curie temperature of iron, the optical properties of GaAs and the small lattice mismatch (<2%). However, measured spin injection varies widely between 1% and 30% depending on growth conditions and temperature. Though the structural properties of Fe/GaAs(100) have been intensively studied, detailed transport calculations are lacking. We investigate different interface configurations of GaAs and Fe using VASP within the projector augmented wave method thereby the GGA/PBE has been adopted for the exchange correlation potentials [1]. Spatial relaxations are performed and the relaxed structures are taken as input for transport calculations. Therefore, we make use of the Green’s Function technique [2] and the Kubo-Greenwood equation. Here, we focus on systems grown in (110) direction, which seem to be of particular interest for spin injection and have been less investigated than the (110) direction.

[1] VASP, G.Kresse, J.Furthmüller, Phys. Rev. B 54, 11169 (1996)

[2] H.Akai, Machikaneyama2002