Berlin 2008 – scientific programme

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MA: Fachverband Magnetismus

MA 32: Postersession II: Spinstruct./Phase Trans. (1-10); Spinelectronics (11-15); Thin Films (16 - 36); Particles/Clusters (37-45); Multiferroics (46-54); Spindynamics/Spin Torque (55 - 76); Post Deadlines (77-79)

MA 32.12: Poster

Friday, February 29, 2008, 11:15–14:00, Poster E

Transport properties of CoFeB/MgO/CoFeB magnetic tunnel junctions — •Marvin Walter, Kai Ubben, Gerrit Eilers, and Markus Münzenberg — IV. Physikalisches Institut, Georg-August-Universität Göttingen, 37077 Göttingen

Magnetic tunnel junctions showing a high tunnel magneto resistance are important for the fabrication of MRAM devices when combined with current induced switching.

Here we present our investigations on CoFeB/MgO/CoFeB magnetic tunnel junctions. The junctions are prepared by means of magnetron sputtering of CoFeB and e-beam evaporation of stoichiometric MgO. Structuring of the multilayer is done using a photolithography process and Argon ion-milling.

We characterize the tunnel junctions by R(H) measurements, I/V-spectroscopy and magneto-optical Kerr effect measurements. Our investigations include the switching properties of the two CoFeB layers depending on their thickness, since no antiferromagnetic layer is used to pin one of the electrodes through the exchange bias effect. Furthermore, a comparison between two different electrode compositions will be made and the dependence on MgO barrier thickness and annealing temperature will be shown.

In the future, we plan to do further downscaling of the size of the magnetic tunnel junctions to achieve sufficient high current densities to observe and investigate current induced switching in this system.

Research is supported by DFG SFB 602.