Berlin 2008 – scientific programme

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MA: Fachverband Magnetismus

MA 32: Postersession II: Spinstruct./Phase Trans. (1-10); Spinelectronics (11-15); Thin Films (16 - 36); Particles/Clusters (37-45); Multiferroics (46-54); Spindynamics/Spin Torque (55 - 76); Post Deadlines (77-79)

MA 32.13: Poster

Friday, February 29, 2008, 11:15–14:00, Poster E

Ion bombardment induced magnetic patterning of reference electrodes in magnetic tunnel junctions with MgO barrier — Volker Höink¹, Xinli Kou¹, •Jan Schmalhorst¹, Günter Reiss¹, Tanja Weis², Daniel Lengemann², and Arno Ehresmann² — ¹Thin Films and Physics of Nanostructures, Department of Physics, University of Bielefeld, P.O. Box 100131, 33501 Bielefeld, Germany — ²Institute of Physics and Center for Interdisciplinary Nanostructure Science and Technology (CINSaT), Kassel University, Heinrich-Plett-Str.40, 34132 Kassel, Germany

For some applications as, e.g., a special type of reconfigurable magnetic logic [1] it is necessary to manipulate the direction of the exchange bias coupling of the reference layer in a magnetic tunnel junction (MTJ). It has been shown in the past that a magnetic patterning of reference layers is possible without a significant loss of tunnel magnetoresistance (TMR) in MTJs with alumina barrier [2,3]. Recently, high TMR amplitudes of up to 500% have been reported for CoFeB / MgO / CoFeB based MTJs [4]. Here, the influence of the ion bombardment on the TMR amplitude, the resistance, and inelastic electron tunnelling spectra of two types of CoFeB / MgO / CoFeB based MTJs is investigated.

[1] Appl. Phys. Lett. 91 (2007) 162505

[2] J. Appl. Phys. 94 (2003) 5556

[3] Appl. Phys. Lett. 86 (2005) 152102

[4] Appl. Phys. Lett. 90 (2007) 212507